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TLN110(F)
TOSHIBA Infrared LED GaAs Infrared Emitter
TLN110(F)
Lead(Pb)-Free Remote-control Systems Opto-electronic Switches
* * * High radiant intensity: IE = 30mW / sr (typ.) Excellent radiant-intensity linearity. Modulation by pulse operation and high frequency is possible. TPS703(F) PIN photodiode with resin to screen out visible light available as detector for remote control Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Forward current Forward current derating (Ta > 25C) Pulse forward current Reverse voltage Power dissipation Operating temperature range Storage temperature range Symbol IF IF / C IFP (Note 1) VR PD Topr Tstg Rating 100 -1.33 1 5 150 -20~75 -30~100 Unit mA mA / C A V mW C C
TOSHIBA
4-6C4
Weight: 0.32 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Pin Connection reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the 1. Anode 1 2 absolute maximum ratings. 2. Cathode Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width 100s, repetitive frequency = 100 Hz
Optical And Electrical Characteristics (Ta = 25C)
Characteristic Forward voltage Reverse current Radiant intensity Radiant power Capacitance Peak emission wavelength Spectral line half width Half value angle Symbol VF IR IE PO CT P Test Condition IF = 100mA VR = 5V IF = 50mA IF = 50mA VR = 0, f = 1MHz IF = 50mA IF = 50mA IF = 50mA Min 15 Typ. 1.35 30 9 20 940 45 8 Max 1.5 10 Unit V A mW / sr mW pF nm nm
1 2
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TLN110(F)
Precautions
Please be careful of the followings. 1. Soldering temperature : 260C max Soldering time : 5s max (Soldering must be performed under the stopper.) 2. When forming the leads, bend each lead under the 2mm from the body of the device. Soldering must be performed after the leads have been formed. 3. Radiant intensity falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1.
I E (t) PO (t) = I E (0) PO (0)
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TLN110(F)
IF - Ta
120 1000
IFP - VFP
(typ.)
100
500 300
Allowable forward current IF (mA)
80
60
Pulse forward current IFP (mA)
100
40
50 30
20
0 0
20
40
60
80
100
120
140
10
Ambient temperature Ta (C)
5 3 Pulse width 100s Repetitive Frequency = 100Hz Ta = 25C
IF - V F
100 50 Ta = 25C
(typ.)
1 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Pulse forward voltage VFP (V)
(mA) Forward current IF
30
10 5 3
1 0.8
IE - IF
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1000
(typ.)
Forward voltage VF
(V)
Pulse width 100s Repetitive 500 Frequency = 100Hz 300 Ta = 25C
100
(mW / sr) Radiant intensity IE
VF / Ta - IF
-2.4
50 30
Forward voltage temperature coefficient VF / Ta (mV / C)
-2.0
10 5 3
-1.6
-1.2
1 0.5
-0.8
0.3
-0.4
1
3
10
30
100
0.1 1
3
10
30
100
300
1000
Forward current IF (mA)
Forward current IF (mA)
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TLN110(F)
Wavelength Characteristic
1.0 IF = 50mA Ta = 25C 0.8
(typ.)
10
Relative
IE - Ta
(typ.)
5
Relative radiant intensity
Relative intensity
3
0.6
0.4
1
0.2 0.5 0 880 0.3
900
920
940
960
980
1000
-20
0
20
40
60
80
100
Wavelength (nm)
Ambient temperature Ta (C)
Distance Characteristics (near distance)
1000
100
Radiation Pattern
(typ.)
(mW / cm2) Converted radiant incidence E
TPS703(F) short circuit current ISC (A)
(Ta = 25C)
10 0 10
IE = 20mW / sr 100
10
20 30 40 50 60 70 80 90
20 30 40 50 60 70 80 90 1.0
IE = 10mW / sr
1 10
0
0.2
0.4
0.6
0.8
Relative intensity
1 1 10 100
0.1
Distance d (mm)
IFP - PW
3000 Ta = 25C
Allowable pulse forward current IFP (mA)
1000 500 300 f = 100Hz
100 50 30
10kHz 5kHz
2kHz 1kHz
500Hz 200Hz
10 3
10
30
100
300
1m
3m
10m
Pulse width
PW
(s)
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2007-10-01
TLN110(F)
Distance Characteristics (long distance)
1000
100
IEP = 200mW / sr at IFP ~300mA, f = 100Hz, PW = 100s 100
10
TPS703(F) short circuit current ISC (A)
1 10
0.1 1
0.01 0.1
0.001 0.01 IE = 20mW / sr at IF ~50mA 0.001 0.01 0.0001 0.1 1 10
Distance d (m)
Converted radiant incidence E
(mW / cm2)
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TLN110(F)
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2007-10-01

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